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Si4972DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = 250 μA
I D = 250 μA
I D = 250 μA
I D = 250 μA
I D = 250 μA
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
30
30
35
35
- 6.5
- 6.5
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
Ch 1
Ch 2
Ch 1
Ch 2
1.5
1.5
3.0
3.0
100
100
V
nA
V DS = 30 V, V GS = 0 V
Ch 1
1
Zero Gate Voltage Drain Current
I DSS
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
Ch 2
Ch 1
1
10
μA
V DS = 30 V, V GS = 0 V, T J = 55 °C
Ch 2
10
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 6 A
Ch 1
Ch 2
Ch 1
10
10
0.012
0.0145
A
Drain-Source On-State
Resistance b
R DS(on)
V GS = 10 V, I D = 4.5 A
V GS = 4.5 V, I D = 5.6 A
Ch 2
Ch 1
0.022
0.016
0.0265
0.0195
Ω
V GS = 4.5 V, I D = 4 A
Ch 2
0.030
0.036
Forward Transconductance b
g fs
V DS = 15 V, I D = 6 A
V DS = 15 V, I D = 4.5 A
Ch 1
Ch 2
27
20
S
Dynamic a
Input Capacitance
C iss
Channel 1
Ch 1
Ch 2
1080
515
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 15 V, V GS = 0 V, f = 1 MHz
Channel 2
V DS = 15 V, V GS = 0 V, f = 1 MHz
V DS = 15 V, V GS = 10 V, I D = 5 A
V DS = 15 V, V GS = 10 V, I D = 5 A
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
170
91
72
38
18.5
9.6
8.3
28
15
13
pF
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q gs
Q gd
R g
Channel 1
V DS = 15 V, V GS = 4.5 V, I D = 5 A
Channel 2
V DS = 15 V, V GS = 4.5 V, I D = 5 A
f = 1 MHz
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
4
3.9
1.9
2.7
1.3
2.5
2.9
6
3.8
4.4
nC
Ω
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Document Number: 73849
S09-0138-Rev. D, 02-Feb-09
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